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l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 0 ? revision history revision description issue date rev. 1. 0 initial issue oct . 28 .200 8 rev. 1. 1 revised features & ordering information lead free and green p ackage available to g reen p ackage available added packing type in ordering information deleted t solder in absolute maximun ratings revised package outline dimension in page 11 revised v dr to 1.5v may . 6 .20 10 rev. 1.2 revised ordering information in page 12 aug.30.2010 rev. 1.3 added sl grade deleted e grade revised i sb1 /i dr aug . 9 .20 11
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 1 ? features ? fast access time : 55 /70ns ? low power consumption: operating current : 20 / 18 ma ( typ . ) standby current : 1 ? a ( typ . ) ? single 2.7 v ~ 5 . 5 v power supply ? all o utputs ttl compatible ? fully static operation ? tr i - state output ? data byte control : lb# ( dq0 ~ dq7 ) ub# ( dq8 ~ dq15 ) ? data retention voltage : 1.5 v ( min .) ? g reen p ackage available ? package : 44 - pin 4 00 mil tsop - ii 4 8 - ball 6mm x 8mm tfbga general description the l y 62 w 128 16 is a 2 , 0 97 , 152 - bit low power cmos static random access memory organized as 131 , 072 words by 16 bits. it is fabricated using very high performance, high reliability cmos technology. its standby current is stable within the range of operating temperature. the l y 62 w 128 16 is well designed for low power application, and particularly well suited for battery back - up nonvolatile memory application. the l y 62 w 128 16 operates from a single power supply of 2.7 v ~ 5.5 v and all inputs and outputs are fully ttl compatible product family product family operating temperature vcc range speed power dissipation standby( i sb1, typ.) operating( icc,typ.) ly62 w128 16 0 ~ 70 functional block diagram pin description symbol description a0 - a1 6 address inputs dq0 C cc power supply v ss ground control circuit ce # we # oe # decoder 128 kx 16 memory array column i / o a 0 - a 16 vcc vss dq 8 - dq 15 upper byte dq 0 - dq 7 lower byte i / o data circuit lb # ub #
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 2 ? pin configuration absolute maximun ratings * parameter symbol rating unit voltage on v cc relative to v ss v t 1 - 0.5 to 6.5 v voltage on any other pin relative to v ss v t 2 - 0.5 to v cc +0.5 v operating temperature t a 0 to 70 (c grade) stg - 65 to 150 d 1 w dc output current i out 50 ma *stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to the absolute maximum rating conditions for extended peri od may affect device reliability. l y 6 2 w 1 2 8 1 6 a 1 a 2 a 3 a 4 dq 15 dq 0 dq 1 dq 2 vcc vss nc a 16 dq 14 dq 12 dq 13 dq 11 vss vcc dq 10 dq 9 dq 3 dq 4 tsop ii 28 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 16 15 20 19 18 22 23 24 25 26 27 21 a 15 a 0 dq 6 dq 7 a 5 a 6 a 7 a 8 a 9 dq 5 dq 8 a 14 a 13 a 12 a 10 nc 34 29 30 31 32 33 44 39 40 41 42 43 35 36 37 38 a 11 ce # we # lb # ub # oe # tfbga nc a 3 a 10 a 9 a 11 a 0 a 14 a 8 nc we # dq 9 dq 14 dq 15 nc vss nc a 13 dq 8 vcc vcc dq 7 a 15 vss ce # lb # dq 6 dq 2 dq 0 a 2 oe # a 1 a 6 a 5 a 4 ub # 1 2 3 4 5 6 h g c d e f a b a 12 nc nc a 7 a 16 dq 10 dq 11 dq 12 dq 13 dq 5 dq 4 dq 3 dq 1
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 3 ? truth table mode ce# oe# we# lb# ub# i/o operation supply current dq0 - dq7 dq8 - dq15 standby h x x x x x x h x h high C C C C sb1 output disable l l h h h h l x x l high C C C C cc ,i cc1 read l l l l l l h h h l h l h l l d out high C out high C out d out i cc ,i cc1 write l l l x x x l l l l h l h l l d in high C in high C in d in i cc ,i cc1 note: h = v ih , l = v il , x = don't care. dc electrical characteristics parameter symbol test condition min. typ. * 4 max. unit supply voltage v cc 2.7 3.0 5.5 v input high voltage v ih *1 0 .7* v cc - v cc +0. 3 v input low voltage v il *2 - 0. 2 - 0.6 v input leakage current i li v cc R in R ss - 1 - 1 a output leakage c urrent i lo v cc R out R ss , output disabled - 1 - 1 a output high voltage v oh i oh = - 1ma 2. 4 2.7 - v output low voltage v ol i ol = 2 ma - - 0.4 v average operating power supply current i cc cycle time = min. ce# = v il , i i/o = 0ma o ther pins at v il or v ih - 5 5 - 20 60 ma - 70 - 18 5 0 ma i cc1 cycle time = 1 s ce# = 0.2v , i i/o = 0ma o ther pins at 0.2v or v cc - 0.2v - 4 10 ma standby power supply current i sb1 ce# R cc - 0.2v other s at 0.2v or v cc - 0.2v ll/lli - 1 50 a sl * 5 sli * 5 25 - 1 5 a 40 notes: 1. v ih (max) = v cc + 3.0 v for pulse width less than 10ns. 2. v il (min) = v ss - 3.0 v for pulse width less than 10ns. 3. over/undershoot specifications are characterized, not 100% tested. 4. typical values are included for reference only and are not guaranteed or tested. typical value s are measured at v cc = v cc (typ.) and t a = 25 5. this parameter is measured at v cc = 3.0v
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 4 ? capacitance (t a = 25 parameter symbol min. max unit input capacitance c in - 6 pf input/output capacitance c i/o - 8 pf note : these parameters are guaranteed by device characterization, but not production tested. ac test conditions input pulse levels 0 .2 v to v cc - 0.2 v input rise and fall times 3 ns input and output timing reference levels 1.5v output load c l = 3 0pf + 1ttl , i oh /i ol = - 2 ma/ 4 ma ac electrical characteristics (1) read cycle parameter sym . ly62 w 128 16 - 55 ly62 w 128 16 - 70 unit min. max. min. max. read cycle time t rc 55 - 70 - ns address access time t aa - 55 - 70 ns chip enable access time t ace - 55 - 70 ns output enable access time t oe - 30 - 35 ns chip enable to output in low - z t clz * 10 - 10 - ns output enable to output in low - z t olz * 5 - 5 - ns chip disable to output in high - z t chz * - 20 - 2 5 ns output disable to output in high - z t ohz * - 20 - 25 ns output hold from address change t oh 10 - 10 - ns lb#, ub# a c cess time t ba - 55 - 70 ns lb#, ub# to high - z output t bhz * - 25 - 30 n s lb#, ub# to low - z output t blz * 10 - 10 - ns (2) write cycle parameter sym . ly62 w 128 16 - 55 ly62 w 128 16 - 70 unit min. max. min. max. write cycle time t wc 55 - 70 - ns address valid to end of write t aw 50 - 60 - ns chip enable to end of write t cw 50 - 60 - ns address set - up time t as 0 - 0 - ns write pulse width t wp 45 - 5 5 - ns write recovery time t wr 0 - 0 - ns data to write time overlap t dw 25 - 30 - ns data hold from end of write time t dh 0 - 0 - ns output active from end of write t ow * 5 - 5 - ns write to output in high - z t whz * - 2 0 - 25 ns lb#, ub# valid to end of write t b w 5 0 - 60 - ns *these parameters are guaranteed by device characterization, but not production tested.
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 5 ? t iming waveforms read cycle 1 (address controlled) (1,2) read cycle 2 ( ce# and oe# controlled) (1,3,4,5) notes : 1. we# is high for read cycle. 2.device is continuously selected oe# = low , ce# = low, lb# or ub# = low . 3.address must be valid prior to or coincident with ce# = low, lb# or ub# = low transition; otherwise t aa is the limiting parameter. 4.t clz , t blz, t olz , t chz, t bhz and t ohz are specified with c l = 5pf. transition is measured 500mv from steady state. 5.at any given temperature and voltage condition, t chz is less than t clz , t bhz is less than t blz , t ohz is less than t olz . dout data valid t oh t aa address t rc previous data valid dout data valid high - z high - z t clz t olz t chz t ohz t oh oe # t oe lb #, ub # t bhz t ace ce # t aa address t rc t ba t blz
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 6 ? write cycle 1 ( we# controlled) (1,2,3,5,6) write cycle 2 ( ce# c ontrolled) (1,2,5,6) dout din data valid t d w t d h ( 4 ) high - z t whz we # t wp t cw t wr t as ( 4 ) t ow lb #, ub # ce # t aw address t wc t bw dout din data valid t d w t d h ( 4 ) high - z t whz we # lb #, ub # t cw ce # address t wr t as t aw t wc t wp t bw
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 7 ? write cycle 3 ( lb# , ub# controlled) (1,2,5 ,6 ) notes : 1. we#,ce#, lb#, ub# must be high during all address transitions. 2.a write occurs during the overlap of a low ce#, low we#, lb# or ub# = low. 3.during a we# controlled write cycle with oe# low , t wp must be greater than t whz + t dw to allow the drivers to turn off and data to be placed on the bus. 4.during this period, i/o pins are in the output state, and input signals must not be applied. 5.if the ce#, lb#, ub# low transition occurs simultaneously with or after we# low transition, the outputs remain in a high impedance state. 6.t ow and t whz are specified with c l = 5pf. transition is measured 500mv from steady state. dout din data valid t d w t d h ( 4 ) high - z t whz we # lb #, ub # t cw ce # address t wr t as t aw t wc t wp t bw
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 8 ? data retention characteristics parameter symbol test condition min. typ. max. unit v cc for data retention v dr ce# R v cc - 0.2v 1.5 - 5.5 v data retention current i dr v cc = 1.5 v ce# R v cc - 0.2v o ther s at 0.2v or v cc - 0.2v l l /lli - 0.5 20 a sl sli 25 - 0.5 4 a 40 - 0.5 4 a sl /sli - 0.5 15 a chip disable to data retention time t cdr see data retention waveforms (below) 0 - - ns recovery time t r t rc * - - ns t rc * = read cycle time data retention waveform low vcc data retention waveform (1) ( ce# controlled) low vcc data retention waveform ( 2 ) ( lb# , ub# controlled) vcc ce # v dr R 1 . 5 v ce # R v cc - 0 . 2 v v cc ( min .) v ih t r t cdr v ih v cc ( min .) vcc lb #, ub # v dr R 1 . 5 v lb #, ub # R v cc - 0 . 2 v v cc ( min .) v ih t r t cdr v ih v cc ( min .)
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 9 ? package outline dimension 44 - pin 400mil tsop - symbols dimensions in millmeters dimensions in mils min. nom. max. min. nom. max. a - - 1.20 - - 47 .2 a1 0.05 0.10 0.15 2.0 3.9 5.9 a2 0.95 1.00 1.05 37 .4 39 .4 41 .3 b 0.30 - 0.45 11.8 - 17.7 c 0.12 - 0.21 4 . 7 - 8 . 3 d 18. 212 18.415 18. 618 7 17 725 7 33 e 11. 506 11. 760 1 2.014 4 53 46 3 47 3 e1 9 . 957 10.1 6 0 10. 363 39 2 400 40 8 e - 0.800 - - 31 . 5 - l 0.40 0.50 0.60 15 . 7 19.7 23 . 6 z d - 0.805 - - 31 . 7 - y - - 0.076 - - 3 0 o 3 o 6 o 0 o 3 o 6 o
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 10 ? 48 - ball 6mm 8mm tfbga package outline dimension
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 11 ? ordering information l y 6 2 w 1 2 8 1 6 u v - w w x x y z z : p a c k i n g t y p e y : t e m p e r a t u r e r a n g e x x : p o w e r t y p e b l a n k : ( c o m m e r c i a l ) 0 c ~ 7 0 c i : ( i n d u s t r i a l ) - 4 0 c ~ + 8 5 c b l a n k : t u b e o r t r a y t r a y : 4 4 - p i n 4 0 0 m i l t s o p - i i 4 8 - b a l l 6 m m x 8 m m t f b g a t : t a p e r e e l l l : u l t r a l o w p o w e r s l : s p e c i a l u l t r a l o w p o w e r u : p a c k a g e t y p e w w : a c c e s s t i m e ( s p e e d ) v : l e a d i n f o r m a t i o n m : 4 4 - p i n 4 0 0 m i l t s o p - i i g : 4 8 - b a l l 6 m m x 8 m m t f b g a l : g r e e n p a c k a g e
l y 62 w12816 rev. 1. 3 128 k x 16 bit low power cmos sram l yontek i nc . reserves the rights to change the specifications and products without notice. 5f, no. 2, industry e. rd. ix, science - based industrial park, hsinchu 300, taiwan. tel: 886 - 3 - 6668838 fax: 886 - 3 - 6668836 12 ?

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